Spin Transfer Torque Memory Devices From Materials to STT-RAM Applications

Integrating the distinct knowledge for the magnetism as well as the silicon manufacturing community, this book provides the knowledge needed by both, resulting in a much–needed overview of the characteristics of perpendicular magnetic films and the materials which can be used for spin transfer torque applications. As such, STT is explained in detail, as are magnetic random access memories (MRAM), while a chapter on recent progress in STT–RAM rounds off the book.

INTRODUCTION

PERPENDICULAR MAGNETIC FILMS
Magnetic Thin Films
(Co/Pt)n and (Co/Ni)n Multilayers
Rare–Earth/Transition–Metal Alloys
L10–ordered CoPt (or FePt) Alloys

HALF METALS
Introduction
Electronic Structure and Spin–Polarization
Heat Treatment
Application

SPIN TRANSFER TORQUE
Theoretic Prediction of STT
STT in Current–Perpendicular–to–Plane Spin–Valve s(SPP–SPVs)
STT in Magnetic Tunnelling Junctions (MTJs)
Reduction of the Critical Current of STT

MAGNETIC RANDOM ACCESS MEMORY
MRAM and Spintronics
Design and Fabrication
Writing Technique
Reading Technique
Applications of MRAM

RECENT PROGRESS IN STT–RAM
Structure of STT–RAM
Design and Fabrication
STT Writing Process in STT–RAM
Several Challenges