Metallic Spintronic Devices Devices, Circuits, and Systems Series
Coordonnateur : Wang Xiaobin
Metallic Spintronic Devices provides a balanced view of the present state of the art of metallic spintronic devices, addressing both mainstream and emerging applications from magnetic tunneling junction sensors and spin torque oscillators to spin torque memory and logic. Featuring contributions from well-known and respected industrial and academic experts, this cutting-edge work not only presents the latest research and developments but also:
- Describes spintronic applications in current and future magnetic recording devices
- Discusses spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device architectures and modeling
- Explores prospects of STT-MRAM scaling, such as detailed multilevel cell structure analysis
- Investigates spintronic device write and read optimization in light of spintronic memristive effects
- Considers spintronic research directions based on yttrium iron garnet thin films, including spin pumping, magnetic proximity, spin hall, and spin Seebeck effects
- Proposes unique solutions for low-power spintronic device applications where memory is closely integrated with logic
Metallic Spintronic Devices aims to equip anyone who is serious about metallic spintronic devices with up-to-date design, modeling, and processing knowledge. It can be used either by an expert in the field or a graduate student in course curriculum.
Perpendicular Spin Torque Oscillator and Microwave-Assisted Magnetic Recording. Spin-Transfer-Torque MRAM: Device Architecture and Modeling. The Prospect of STT-RAM Scaling. Spintronic Device Memristive Effects and Magnetization Switching Optimizing. Magnetic Insulator-Based Spintronics: Spin Pumping, Magnetic Proximity, Spin Hall, and Spin Seebeck Effects on Yttrium Iron Garnet Thin Films. Electric Field-Induced Switching for Magnetic Memory Devices.
Xiaobin Wang is director at Avalanche Technology and consultant at Caraburo Consulting LLC and Ingredients LLC. He holds a Ph.D from the University of California, San Diego. Dr. Wang has published over 100 articles and holds 50 US patents, approved or pending. He previously worked at Western Digital and Seagate Technology. His work in memory and data storage includes device design, advanced technology gap closure, prediction of system performance through bottom-up (from physics to system performance) and top-down (from system performance to component requirements) approaches, company product platform and basic technology roadmap modeling, new concept initiation, and intellectual property analysis.
Date de parution : 04-2017
15.6x23.4 cm
Disponible chez l'éditeur (délai d'approvisionnement : 14 jours).
Prix indicatif 96,92 €
Ajouter au panierDate de parution : 08-2014
Ouvrage de 273 p.
15.6x23.4 cm
Disponible chez l'éditeur (délai d'approvisionnement : 15 jours).
Prix indicatif 232,80 €
Ajouter au panierThèmes de Metallic Spintronic Devices :
Mots-clés :
Free Layer; Low Power; MTJ Resistance; Memristor; MTJ Device; Multi-Bit Scaling; Free Layer Magnetization; Spin Seebeck; MTJ; Spin Hall; Thermal Stability Factor; Spin Torque; Perpendicular Anisotropy; Logic Devices; Spin Wave; Emerging Memory; STT; Metallic Spintronics; Magnetization Precession; Jian-Gang (Jimmy) Zhu; FM Layer; Xiaochun Zhu; YIG Film; Seung H; Kang; Spin Current; Yaojun Zhang; Wujie Wen; Domain Wall; Hai Li; Spin Pumping; Yiran Chen; Magnetization Switching; Yiyan Sun; Ac Field; Zihui Wang; Read Error Rate; Lei Lu; MTJ Stack; Pedram Khalili; Spintronic Device; L; Wang Kang; STO; multilevel cell structure analysis; Perpendicular Layer; STT-MRAM device architecture; Write Error; spintronic memristive effects; Spin Valve; spintronic applications