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Single-Atom Nanoelectronics

Langue : Anglais

Coordonnateurs : Prati Enrico, Shinada Takahiro

Couverture de l’ouvrage Single-Atom Nanoelectronics

Single-Atom Nanoelectronics covers the fabrication of single-atom devices and related technology, as well as the relevant electronic equipment and the intriguing new phenomena related to single-atom and single-electron effects in quantum devices. It also covers the alternative approaches related to both silicon- and carbon-based technologies, also from the point of view of large-scale industrial production. The publication provides a comprehensive picture of the state of the art at the cutting edge and constitutes a milestone in the emerging field of beyond-CMOS technology.

Although there are numerous publications on nanoelectronics, no book highlights the effect of a single atom on device performance, which can be beneficial for making extensive use of CMOS technologies. This book is the first to deal with topics related to single-atom control, which is the final frontier for nanoelectronics.

Preface, 1 Introduction, 2 Quantum Information in Silicon Devices Based on Individual Dopants, 3 Theory and Simulations of Controlled Electronic States Bound to a Single Dopant in Silicon, 4 Using Scanning Tunneling Microscopy to Realize Atomic-Scale Silicon Devices, 5 Deterministic Single-Ion Implantation Method for Extending CMOS Technologies, 6 Single-Ion Implantation for Quantum Computing, 7 Single Atom Imaging—Dopant Atoms in Silicon-Based Semiconductor Devices—by Atom Probe Tomography, 8 Low-Noise Current Measurements on Quantum Devices Operating at Cryogenic Temperature, 9 Orbital Structure and Transport Characteristics of Single Donors, 10 Single-Donor Transport Spectroscopy in Ultimate Silicon Transistors, 11 A Spin Quantum Bit Architecture with Coupled Donors and Quantum Dots in Silicon, 12 Single Spins in Diamond: Novel Quantum Devices and Atomic Sensors, 13 Silicon-Based Single-Dopant Devices and Integration with Photons, 14 Circuits with Single-Atom Devices, Index

Enrico Prati received a bachelor’s in theoretical physics in 1998 from the University of Pisa and a PhD in physics in 2002. From 2003 to 2008, he worked at Istituto Nazionale di Fisica della Materia (INFM) and from 2009 he is permanent researcher of Istituto per la Microelettronica e Microsistemi (IMM) of Consiglio Nazionale delle Ricerche (CNR) in Agrate Brianza. In February 2004 he received the Young Scientist Award from the URSI for his work on negative refractive index propagation and metamaterials. From 2011, he has contributed to the International Technology Roadmap for Semiconductors (ITRS) Emerging Research Materials (ERM) Committee on deterministic doping. His present research fields are both theoretical and experimental aspects of low-dimensional electron systems, quantum transport, deterministic doping for More than Moore applications, and quantum information in solid state. At present Dr. Prati is secretary of the Associazione Italiana per la Ricerca (www.associazionericerca.it) .

Takahiro Shinada received a PhD in engineering in 2000 and an MBA in technology management in 2007 from Waseda University. From 2000 to 2012 he worked at Waseda University, where he was promoted to associate professor in 2006. Since 2012 he has been with the National Institute of Advanced Industrial Science and Technology (AIST), serving as the senior officer for advanced nanodevice research. He is a member of the International Technology Roadmap for Semiconductors (ITRS) Emerging Research Devices (ERD) and Emerging Research Materials (ERM) Chapters. His research concerns are deterministic doping in nanoelectronics for extended CMOS applications and its application in biological systems for environment, safety, and health (ESH) issues.