Micro- and Nanoelectronics Emerging Device Challenges and Solutions Devices, Circuits, and Systems Series

Micro- and Nanoelectronics: Emerging Device Challenges and Solutions presents a comprehensive overview of the current state of the art of micro- and nanoelectronics, covering the field from fundamental science and material properties to novel ways of making nanodevices. Containing contributions from experts in both industry and academia, this cutting-edge text:

• Discusses emerging silicon devices for CMOS technologies, fully depleted device architectures, characteristics, and scaling
• Explains the specifics of silicon compound devices (SiGe, SiC) and their unique properties
• Explores various options for post-CMOS nanoelectronics, such as spintronic devices and nanoionic switches
• Describes the latest developments in carbon nanotubes, iii-v devices structures, and more

Micro- and Nanoelectronics: Emerging Device Challenges and Solutions provides an excellent representation of a complex engineering field, examining emerging materials and device architecture alternatives with the potential to shape the future of nanotechnology.

SiGe BiCMOS Technology and Devices. Si–Ge Interdiffusion, Dopant Diffusion, and Segregation in SiGe- and SiGe:C-Based Devices. SiC MOS Devices: N Passivation of Near-Interface Defects. Fully Depleted Devices: FDSOI and FinFET. Fully Depleted SOI Technology Overview. FinFETs: Designing for New Logic Technology. Reliability Issues in Planar and Nonplanar (FinFET) Device Architectures. High-Mobility Channels. 2-D InAs XOI FETs: Fabrication and Device Physics. Beyond-CMOS Devices. Stateful STT-MRAM-Based Logic for Beyond–Von Neumann Computing. Four-State Hybrid Spintronics–Straintronics for Ultralow Power Computing. Nanoionic Switches as Post-CMOS Devices for Neuromorphic Electronics. Physics-Based Compact Graphene Device Modeling. Carbon Nanotube Vertical Interconnects: Prospects and Challenges. Graphene Nanosheet as Ultrathin Barrier.

Tomasz Brozek is a technical fellow at PDF Solutions, San Jose, California, USA, where he is responsible for advanced silicon technology characterization, diagnostic methods development, and early yield ramp of integrated circuits. He holds an MS EE and a Ph.D in physics. His doctorate research at the Institute of Semiconductor Physics in Kiev, Ukraine focused on radiation effects and degradation in microelectronic MOS systems. Previously he taught and conducted research at Warsaw University of Technology, Poland and the University of California, Los Angeles, USA, and worked at Motorola R&D organizations in Texas and Arizona, USA.