Ferroelectric-Gate Field Effect Transistor Memories (2^nd Ed., 2nd ed. 2020) Device Physics and Applications Topics in Applied Physics Series, Vol. 131

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact.

Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time.

This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics.

The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.           

I. Introduction.- II. Practical Characteristics of Inorganic Ferroelectric-gate FETs: Si-Based Ferroelectric-gate Field Effect Transistors.- III. Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors.- Ⅳ Practical Characteristics of Organic Ferroelectric-Gate FETs: Si-Based Ferroelectric-Gate Field Effect Transistors.- V Practical Characteristics of Organic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors.- VI Practical Characteristics of Organic Ferroelectric-Gate FETs : Ferroelectric-Gate Field Effect Transistors with Flexible Substrates.- Ⅶ Applications and Future Prospects.

Byung-Eun Park received the B.S. and M.S. degrees from the University of Seoul, Korea, and the Ph.D. degree in applied engineering from the Tokyo Institute of Technology, Tokyo, Japan.

He is a Professor at School of Electrical and Computer Engineering, University of Seoul, Korea. Prior to joining the University of Seoul in 2004, he was an Assistant Professor in Tokyo Institute of Technology, and had joined the R&D Association for Future Electron Devices, Japan. In the period from 2008 to 2011, he was a member of Technical Innovation Evaluation Committee of Ministry of Knowledge Economy. In 2012 and 2015, he was a non-executive director of Korea Intellectual Property Strategy Institute. Now, he is Present of Association of the Korea-Japan Researcher Network and a member of Compensation Council for duty invention of Seoul Metropolitan Government. He has over 300 patents including pending. His research interests are device and process technologies in next-generation electronic devices. He also interests display devices, solar cells, sensors and brain science.

Hiroshi Ishiwara was born in Japan in 1945. He received the B.S., M.S., and Ph.D. degrees in electronic engineering from Tokyo Institute of Technology, Tokyo, Japan, in 1968, 1970, and 1973, respectively.

He was with the Tokyo Institute of Technology, as Research Associate (1973-1976), Associate Professor (1976-1989), and Professor (1989-2011). In 2004 and 2005, he was the Dean of professor at Interdisciplinary Graduate School of Science and Engineering. He retired from Tokyo Institute of Technology in 2011 and he is now a Professor Emeritus. In the period from 2010 to 2013, he was a WCU (World Class University) Professor in Department of Physics, Konkuk University, Korea. His research interests are device and process technologies in integrated circuits, particularly in ferroelectric memories. He has published 450 peer-reviewed papers with total citations morethan 6