Introductory Nanoelectronics Physical Theory and Device Analysis
Auteur : Khanna Vinod Kumar
This introductory text develops the reader?s fundamental understanding of core principles and experimental aspects underlying the operation of nanoelectronic devices. The author makes a thorough and systematic presentation of electron transport in quantum-confined systems such as quantum dots, quantum wires, and quantum wells together withLandauer-Büttiker formalism and non-equilibrium Green?s function approach. The coverage encompasses nanofabrication techniques and characterization tools followed by a comprehensive exposition of nanoelectronic devices including resonant tunneling diodes, nanoscale MOSFETs, carbon nanotube FETs, high-electron-mobility transistors, single-electron transistors, and heterostructure optoelectronic devices. The writing throughout is simple and straightforward, with clearly drawn illustrations and extensive self-study exercises for each chapter.
- Introduces the basic concepts underlying the operation of nanoelectronic devices.
- Offers a broad overview of the field, including state-of-the-art developments.
- Covers the relevant quantum and solid-state physics and nanoelectronic device principles.
- Written in lucid language with accessible mathematical treatment.
- Includes extensive end-of-chapter exercises and many insightful diagrams.
Nanoelectronics and Mesoscopic Physics. Part I: Quantum Mechanics for Nanoelectronics. Origins of Quantum Theory. The Schrodinger Wave Equation. Operator Methods and Postulates of Quantum Mechanics. Particle-in-a-Box and Related Problems. The Hydrogen Atom. Part II: Condensed Matter Physics for Nanoelectronics. Drude-Lorentz Free Electron Model. Sommerfield Free Electron Fermi Gas Model. Kronig-Penney Periodic Potential Model. Part III: Electron Behavior in Nanostructures. Quantum Confinement and Electronic Structure of Quantum Dots. Electrons in Quantum Wires and Landauer-Büttiker Formalism. Electrons in Quantum Wells. Part IV: Green’s Function Method for Nanoelectronic Device Modeling. Dirac Delta and Green’s Function Preliminaries. Method of Finite Differences and Self Energy of the Leads. Non-Equilibrium Green’s Function (NEGF) Formalism. Part V: Fabrication and Characterization of Nanostructures. Fabrication Tools. Characterization Facilities. Part VI: Exemplar Nanoelectronic Devices. Resonant Tunneling Diodes. Nanoscale MOSFETs and Similar Devices. High-Electron Mobility Transistors. Single Electron Transistors. Heterostructure Optoelectronic Devices. Index
Vinod Kumar Khanna is a former emeritus scientist, CSIR (Council of Scientific & Industrial Research) and emeritus professor, AcSIR (Academy of Scientific & Innovative Research), India. He is a retired Chief Scientist and Head, MEMS & Microsensors Group, CSIR-CEERI (CSIR-Central Electronics Engineering Research Institute), Pilani (Rajasthan) and Professor, AcSIR, India.
Date de parution : 04-2022
13.8x21.6 cm
Date de parution : 07-2020
21x28 cm
Thèmes d’Introductory Nanoelectronics :
Mots-clés :
Wave Function; Green’s Function; nanoscale electronics; Energy Band Diagram; microelectronics; Drude Model; solid-state physics; Retarded Green’s Function; quantum dots; Depletion Region; non-equilibrium Green's function; Electron Beam Lithography; nanoelectronic devices; Quantum Confinement; quantum-confined systems; Hamiltonian Operator; Schrodinger’s Equation; Bandgap Material; Short Channel MOSFET; Free Electron Gas; Schrodinger Equation; Quantum Wells; RTD; Finite Differences Method; Electron Affinity; CNT FET; Exciton Bohr Radius; Advanced Green’s Function; Nanowire FET; Drain Source Current; Tunneling Current