Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies, 2010 Springer Series in Advanced Microelectronics Series, Vol. 28
Langue : Anglais
Since scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of conventional planar bulk CMOS. Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies provides a technology oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate CMOS technologies.
Analog Properties of Multi-Gate MOSFETs.- High-k Related Design Issues.- Multi-Gate Related Design Aspects.- Multi-Gate Tunneling FETs.- Conclusions and Outlook.
First book that covers high-k related design aspects regarding analog/mixed-signal circuits First hardware based analog/mixed-signal circuit assessment in multi-gate CMOS Close link to device and technology Covers tunnel devices as outlook beyond CMOS Includes supplementary material: sn.pub/extras
Date de parution : 11-2009
Ouvrage de 127 p.
15.5x23.5 cm
Date de parution : 03-2012
Ouvrage de 127 p.
15.5x23.5 cm
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