Subsecond Annealing of Advanced Materials, 2014 Annealing by Lasers, Flash Lamps and Swift Heavy Ions Springer Series in Materials Science Series, Vol. 192
Coordonnateurs : Skorupa Wolfgang, Schmidt Heidemarie
The very early time.- Nanonet formation by constitutional supercooling of pulsed laser annealed, Mn-implanted germanium.- Metastable activation of dopants by solid phase epitaxial recrystallization.- Superconducting Ga-implanted Germanium.- Structural changes in SiGe/Si layers induced by fast crystallization.- Sub-nanosecond thermal spike-induced nanostructuring of thin solid films under swift heavy-ion (SHI) irradiation.- Pulsed-laser-induced epitaxial growth of silicon for three-dimensional integrated circuits.- Improvement of performance and cost of functional films using large area laser RTP.- Pulsed laser dopant activation for semiconductors and solar cells.- Formation of high-quality µm-order-thick poly-Si films on glass substrates by flash lamp annealing.- Millisecond-range liquid-phase processing of silicon-based hetero-nanostructures.- Radiation thermometry – sources of uncertainty during contactless temperature measurement.- Millisecond annealing for semiconductor device applications.- Low-cost and large-area electronics, roll-to-roll processing and beyond.- Application of sub-second annealing for dilute ferromagnetic semiconductors.
Written by leading researchers in the field
Describes annealing-related processes in semiconductor technology
Includes a broad range of examples
Includes supplementary material: sn.pub/extras
Date de parution : 08-2016
Ouvrage de 321 p.
15.5x23.5 cm
Disponible chez l'éditeur (délai d'approvisionnement : 15 jours).
Prix indicatif 52,74 €
Ajouter au panierDate de parution : 12-2013
Ouvrage de 321 p.
15.5x23.5 cm