Nitride Wide Bandgap Semiconductor Material and Electronic Devices
Auteurs : Hao Yue, Zhang Jin Feng, Zhang Jin Cheng
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
Nitride Wide Bandgap Semiconductor Material and Electronic Devices
Yue Hao, Jin Feng Zhang, and Jin Cheng Zhang are affiliated with Xidian University, China.
Date de parution : 06-2020
17.8x25.4 cm
Date de parution : 11-2016
17.8x25.4 cm
Disponible chez l'éditeur (délai d'approvisionnement : 15 jours).
Prix indicatif 220,72 €
Ajouter au panierThèmes de Nitride Wide Bandgap Semiconductor Material and... :
Mots-clés :
GaN HEMT; GaN Heterostructure; Ill-nitride; AlGaN Barrier Layer; wide band gap; Nucleation Layer; high electron mobility transistors; GaN HEMTs; semiconductor material; 2DEG Density; electronic devices; AlN Interlayer; GaN Film; Sapphire Substrate; AlN Nucleation Layer; GaN Buffer Layer; Vicinal Substrates; Alloy Disorder Scattering; HEMT; GaN Channel; Breakdown Voltage; GaN Template; Dislocation Density; Reciprocal Space Mapping; AlGaN Barrier; Room Temperature Band Gap; GaN Epilayer; GaN Cap Layer; Fluorine Plasma; IFR Scattering
