Nanoparticle Engineering for Chemical-Mechanical Planarization Fabrication of Next-Generation Nanodevices
Auteurs : Paik Ungyu, Park Jea-Gun
In the development of next-generation nanoscale devices, higher speed and lower power operation is the name of the game. Increasing reliance on mobile computers, mobile phone, and other electronic devices demands a greater degree of speed and power. As chemical mechanical planarization (CMP) progressively becomes perceived less as black art and more as a cutting-edge technology, it is emerging as the technology for achieving higher performance devices.
Nanoparticle Engineering for Chemical-Mechanical Planarization explains the physicochemical properties of nanoparticles according to each step in the CMP process, including dielectric CMP, shallow trend isolation CMP, metal CMP, poly isolation CMP, and noble metal CMP. The authors provide a detailed guide to nanoparticle engineering of novel CMP slurry for next-generation nanoscale devices below the 60nm design rule. They present design techniques using polymeric additives to improve CMP performance. The final chapter focuses on novel CMP slurry for the application to memory devices beyond 50nm technology.
Most books published on CMP focus on the polishing process, equipment, and cleaning. Even though some of these books may touch on CMP slurries, the methods they cover are confined to conventional slurries and none cover them with the detail required for the development of next-generation devices. With its coverage of fundamental concepts and novel technologies, this book delivers expert insight into CMP for all current and next-generation systems.
Overview of CMP Technology. Interlayer Dielectric CMP Shallow Trench Isolation CMP. Copper CMP. Nanotopography. Novel CMP for Next-Generation Devices. References. Index.
Date de parution : 06-2020
15.6x23.4 cm
Disponible chez l'éditeur (délai d'approvisionnement : 14 jours).
Prix indicatif 71,13 €
Ajouter au panierDate de parution : 02-2009
Ouvrage de 192 p.
15.6x23.4 cm
Thèmes de Nanoparticle Engineering for Chemical-Mechanical... :
Mots-clés :
CMP Process; PAA Concentration; PAA Layer; Polishing Rate; PVP Polymer; Removal Rate; Film Thickness Variation; PVP; PAA Solution; NAND Flash Memory; PAA Chain; Electrokinetic Behavior; Pattern Density; Oxide Film; Ceria Particles; Poly Si Film; Pram; pH Iep; Nitride Film; Poly Si; Removal Depth; Higher Removal Rate; Contact Angle; Abrasive Particles; Nano Fumed Silica Particle