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Molecular Beam Epitaxy Materials and Device Applications Wiley Series in Materials for Electronic & Optoelectronic Applications Series

Langue : Anglais

Auteurs :

Couverture de l’ouvrage Molecular Beam Epitaxy

Covers both the fundamentals and the state-of-the-art technology used for MBE

Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications.

Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more.

  • Includes chapters on the fundamentals of MBE
  • Covers new challenging researches in MBE and new technologies 
  • Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners
  • Part of the Materials for Electronic and Optoelectronic Applications series

Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.

List of Contributors

Series Preface

Preface

Part I Fundamentals of MBE

1. History of MBE
Tom Foxon

1.1 Introduction

1.2 The MBE Process

1.3 Controlled n and p Doping

1.4 Modified Growth Procedures

1.5 Gas-Source MBE

1.6 Low-Dimensional Structures

1.7 III–V Nitrides, Phosphides, Antimonides and Bismides and Other Materials

1.8 Early MBE-Grown Devices

1.9 Summary

Acknowledgments

References

2. General Description of MBE
Yoshiji Horikoshi

2.1 Introduction

2.2 High-Vacuum Chamber System

2.3 Atomic and Molecular Beam Sources

2.4 Measurement of MBE Growth Parameters

2.5 Surface Characterization Tools for MBE Growth

2.6 Summary

Acknowledgments

References

3. Migration-Enhanced Epitaxy and its Application
Yoshiji Horikoshi

3.1 Introduction

3.2 Toward Atomically Flat Surfaces in MBE

3.3 Principle of MEE

3.4 Growth of GaAs by MEE

3.5 Incommensurate Deposition and Migration of Ga Atoms

3.6 Application of MEE Deposition Sequence to Surface Research

3.7 Application of MEE to Selective Area Epitaxy

3.8 Summary

Acknowledgments

References

4. Nanostructure Formation Process of MBE
Koichi Yamaguchi

4.1 Introduction

4.2 Growth of Quantum Wells

4.3 Growth of Quantum Wires and Nanowires

4.4 Growth of Quantum Dots

4.5 Conclusion

References

5. Ammonia Molecular Beam Epitaxy of III-Nitrides
Micha N. Fireman and James S. Speck

5.1 Introduction

5.2 III-Nitride Fundamentals

5.3 Ammonia Molecular Beam Epitaxy

5.4 Ternary Nitride Alloys and Doping

5.5 Conclusions

References

Contents

6. Mechanism of Selective Area Growth by MBE
Katsumi Kishino

6.1 Background

6.2 Growth Parameters for Ti Mask SAG

6.3 Initial Growth of Nanocolumns

6.4 Nitrogen Flow Rate Dependence of SAG

6.5 Diffusion Length of Ga Adatoms

6.6 Fine Control of Nanocolumn Arrays by SAG

6.7 Controlled Columnar Crystals from Micrometer to Nanometer Size

6.8 Nanotemplate SAG of AlGaN Nanocolumns

6.9 Conclusions and Outlook

References

Part II MBE Technology for Electronic Devices Application

7. MBE of III-Nitride Semiconductors for Electronic Devices
Rolf J. Aidam, O. Ambacher, E. Diwo, B.-J. Godejohann, L. Kirste, T. Lim, R. Quay, and P. Waltereit

7.1 Introduction

7.2 MBE Growth Techniques

7.3 AlGaN/GaN High Electron Mobility Transistors on SiC Substrate

7.4 AlGaN/GaN High Electron Mobility Transistors on Si Substrate

7.5 HEMTs with Thin Barrier Layers for High-Frequency Applications

7.6 Vertical Devices

References

8. Molecular Beam Epitaxy for Steep Switching Tunnel FETs
Salim El Kazzi

8.1 Introduction

8.2 TFET Working Principle

8.3 III–V Heterostructure for TFETs

8.4 MBE for Beyond CMOS Technologies

8.5 Doping

8.6 Tunneling Interface Engineering

8.7 MBE for III–V TFET Integration

8.8 Conclusions and Perspectives

Acknowledgments

References

Part III MBE for Optoelectronic Devices

9. Applications of III–V Semiconductor Quantum Dots in Optoelectronic Devices
Kouichi Akahane and Yoshiaki Nakata

9.1 Introduction: Self-assembled Quantum Dots

9.2 Lasers Based on InAs Quantum Dots Grown on GaAs Substrates

9.3 InAs QD Optical Device Operating at Telecom Band (1.55 μm)

9.4 Recent Progress in QD Lasers

9.5 Summary

References

10. Applications of III–V Semiconductors for Mid-infrared Lasers
Yuichi Kawamura

10.1 Introduction

10.2 GaSb-Based Lasers

10.3 InP-Based Lasers

10.4 InAs-Based Lasers

10.5 Conclusion

References

11. Molecular Beam Epitaxial Growth of Terahertz Quantum Cascade Lasers
Harvey E. Beere and David A. Ritchie

11.1 Introduction

11.2 Epitaxial Challenges

References

12. MBE of III-Nitride Heterostructures for Optoelectronic Devices
C. Skierbiszewski, G. Muziol, H. Turski, M. Siekacz, K. Nowakowski-Szkudlarek, A. Feduniewicz- ̇ Zmuda, P. Wolny, and M. Sawicka

12.1 Introduction

12.2 Low-Temperature Growth of Nitrides by PAMBE

12.4 New Concepts of LDs with Tunnel Junctions

12.5 Summary

Acknowledgments

References

13. III-Nitride Quantum Dots for Optoelectronic Devices
Pallab Bhattacharya, Thomas Frost, Shafat Jahangir, Saniya Deshpande, and Arnab Hazari

13.1 Introduction

13.2 Molecular Beam Epitaxy of InGaN/GaN Self-organized Quantum Dots

13.3 Quantum Dot Wavelength Converter White Light-Emitting Diode

13.4 Quantum Dot Lasers

13.5 Summary and Future Prospects

References

14. Molecular-Beam Epitaxy of Antimonides for Optoelectronic Devices
Eric Tournie

14.1 Introduction

14.2 Epitaxy of Antimonides: A Brief Historical Survey

14.3 Molecular-Beam Epitaxy of Antimonide

14.4 Outlook

Acknowledgments

References

15. III–V Semiconductors for Infrared Detectors
P. C. Klipstein

15.1 Introduction

15.2 InAsSb XBn Detectors

15.3 T2SL XBp Detectors

15.4 Conclusion

Acknowledgments

References

16. MBE of III–V Semiconductors for Solar Cells
Takeyoshi Sugaya

16.1 Introduction

16.2 InGaP Solar Cells

16.3 InGaAsP Solar Cells Lattice-Matched to GaAs

16.4 InGaAsP Solar Cells Lattice-Matched to InP

16.5 Growth of Tunnel Junctions for Multi-Junction Solar Cells

16.6 Summary

References

Part IV Magnetic Semiconductors and Spintronics Devices

17. III–V-Based Magnetic Semiconductors and Spintronics Devices
Hiro Munekata

17.1 Introduction

17.2 Hole-Mediated Ferromagnetism

17.3 Molecular Beam Epitaxy and Materials Characterization

17.4 Studies in View of Spintronics Applications

17.5 Conclusions and Prospects

Acknowledgments

References

18. III-Nitride Dilute Magnetic Semiconductors
Yi-Kai Zhou and Hajime Asahi

18.1 Introduction

18.2 Transition-Metal-Doped GaN

18.3 Rare-Earth-Doped III-Nitrides

18.4 Device Applications

18.5 Summary

References

19. MBE Growth, Magnetic and Magneto-optical Properties of II–VI DMSs
Shinji Kuroda

19.1 II–VI DMSs Doped with Mn

19.2 II–VI DMSs Doped with Cr and Fe

19.3 ZnO-Based DMSs

References

20. Ferromagnet/Semiconductor Heterostructures and Nanostructures Grown by Molecular Beam Epitaxy
Masaaki Tanaka

20.1 Introduction

20.2 MnAs on GaAs(001) and Si(001) Substrates

20.3 GaAs:MnAs Granular Materials: Magnetoresistive Effects and Related Devices

20.4 Summary

Acknowledgments

References

21. MBE Growth of Ge-Based Diluted Magnetic Semiconductors
Tianxiao Nie, Jianshi Tang, and Kang L. Wang

21.1 Introduction

21.2 MBE Growth of MnxGe1−x Thin Film and Nanostructures

21.3 Magnetic Properties of MnxGe1−x Thin Films and Nanostructures

21.4 Electric-Field-Controlled Ferromagnetism and Magnetoresistance

21.5 Conclusion

Acknowledgments

References

Part V Challenge of MBE to New Materials and New Researches

22. Molecular Beam Epitaxial Growth of Topological Insulators
Xiao Feng, Ke He, Xucun Ma, and Qi-Kun Xue

22.1 Introduction

22.2 MBE Growth of Bi2Se3 Family Three-Dimensional Topological Insulators

22.3 Defects in MBE-Grown Bi2Se3 Family TI Films

22.4 Band Structure Engineering in Ternary Bi2Se3 Family TIs

22.5 Magnetically Doped Bi2Se3 Family TIs

22.6 MBE Growth of 2D TI Materials

22.7 Summary

References

23. Applications of Bismuth-Containing III–V Semiconductors in Devices
Masahiro Yoshimoto

23.1 Introduction

23.2 Growth of GaAsBi

23.3 Properties of GaAsBi

23.4 Applications of GaAsBi

23.5 Applications of Other Bi-Containing Semiconductors

23.6 Summary

References

24. MBE Growth of Graphene
J. Marcelo J. Lopes

24.1 Introduction

24.2 MBE of Graphene on Metals

24.3 MBE of Graphene on Semiconductors

24.4 MBE of Graphene on Oxides and Other Dielectrics

24.5 Conclusions

Acknowledgments

References

25. MBE Growth and Device Applications of Ga2O3
Masataka Higashiwaki

25.1 Introduction

25.2 Physical Properties of Ga2O3

25.3 Ga2O3 Electronic Device Applications

25.4 Melt-Grown Bulk Single Crystals

25.5 Ga2O3 MBE Growth

25.6 Transistor Applications

25.7 Summary

References

26. Molecular Beam Epitaxy for Oxide Electronics
Abhinav Prakash and Bharat Jalan

26.1 Introduction

26.2 Structure–Property Relationship in Perovskite Oxides

26.3 Oxide Molecular Beam Epitaxy

26.4 Recent Developments in Oxide MBE

26.5 Outlook

26.6 Summary

Acknowledgments

References

27. In-situ STM Study of MBE Growth Process
Shiro Tsukamoto

27.1 Introduction

27.2 The Advantages of In-situ STM Observation for Understanding Growth Mechanisms

27.3 In-situ STM Observation of InAs Growth on GaAs(001) by STMBE System

27.4 In-situ STM Observation of Various Growths and Treatments on GaAs Surfaces by STMBE System

27.5 Conclusion

References

28. Heterovalent Semiconductor Structures and their Device Applications
Yong-Hang Zhang

28.1 Introduction

28.2 MBE Growth of Heterovalent Structures

28.3 ZnTe and GaSb/ZnTe Heterovalent Distributed Bragg Reflector Structures Grown on GaSb

28.4 CdTe/MgCdTe Structure and Heterovalent Devices Grown on InSb Substrates

28.5 Single-Crystal CdTe/MgxCd1−xTe Solar Cells

28.6 CdTe/InSb Two-Color Photodetectors

Acknowledgments

References

Index

Series Editors

Arthur Willoughby University of Southampton, Southampton, UK

Peter Capper formerly of SELEX Galileo Infrared Ltd, Southampton, UK

Safa Kasap University of Saskatchewan, Saskatoon, Canada

Edited by Hajime Asahi Emeritus Professor, Osaka University, Japan

Yoshiji Horikoshi Emeritus Professor, Waseda University, Tokyo, Japan

Date de parution :

Ouvrage de 354 p.

17x24.4 cm

Disponible chez l'éditeur (délai d'approvisionnement : 12 jours).

Prix indicatif 232,41 €

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