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Hot Carrier Degradation in Semiconductor Devices, 2015

Langue : Anglais

Coordonnateur : Grasser Tibor

Couverture de l’ouvrage Hot Carrier Degradation in Semiconductor Devices

This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today?s most complicated reliability issues in semiconductor devices.  Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (?become hot?), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance. 

Part I: Beyond Lucky Electrons.- From Atoms to Circuits: Theoretical and Empirical Modeling of Hot Carrier Degradation.- The Energy Driven Hot Carrier Model.- Hot-Carrier Degradation in Decananometer.- Physics-based Modeling of Hot-carrier Degradation.- The Spherical Harmonics Expansion
Method for Assessing Hot Carrier Degradation.- Recovery from Hot Carrier Induced Degradation Through Temperature Treatment.- Characterization of MOSFET Interface States Using the Charge Pumping Technique.- Part II: CMOS and Beyond.- Channel Hot Carriers in SiGe and Ge pMOSFETs.- Channel Hot Carrier Degradation and Self-Heating Effects in FinFETs.- Characterization and Modeling of High-Voltage LDMOS Transistors.- Compact modelling of the Hot-carrier Degradation of Integrated HV MOSFETs.- Hot-Carrier Degradation in Silicon-Germanium Heterojunction Bipolar Transistors.- Part III: Circuits.- Hot-Carrier Injection Degradation in Advanced CMOS nodes: A bottom-up approach to circuit and system reliability.- Circuit Reliability – Hot Carrier Stress of MOS-transistors in Different Fields of Application.- Reliability Simulation Models for Hot Carrier Degradation.
Tibor Grasser is an Associate Professor at the Institute for Microelectronics for Technische Universität Wien.

Describes the intricacies of hot carrier degradation in modern semiconductor technologies

Covers the entire hot carrier degradation phenomenon, including topics such as characterization, carrier transport, carrier-defect interaction, technological impact, circuit impact, etc

Enables detailed understanding of carrier transport, interaction of the carrier ensemble with the defect precursors, and an accurate assessment of how the newly created defects impact the device performance

Covers modeling issues starting from detailed physics-based TCAD approaches up to efficient SPICE-compatible compact models

Includes supplementary material: sn.pub/extras

Date de parution :

Ouvrage de 517 p.

15.5x23.5 cm

Disponible chez l'éditeur (délai d'approvisionnement : 15 jours).

Prix indicatif 118,31 €

Ajouter au panier

Date de parution :

Ouvrage de 517 p.

15.5x23.5 cm

Disponible chez l'éditeur (délai d'approvisionnement : 15 jours).

Prix indicatif 105,49 €

Ajouter au panier