Charged semiconductor defects: structure, thermodynamics & diffusion (Engineering materials & processes), Softcover reprint of hardcover 1st ed. 2009 Structure, Thermodynamics and Diffusion Coll. Engineering Materials and Processes
Auteurs : Seebauer Edmund G., Kratzer Meredith C.
Features: Group IV, III-V, and oxide semiconductors. Intrinsic and extrinsic defects and point defects, as well as defect pairs, complexes and clusters. A crucial reference for materials scientists, surface scientists, electrical engineers, and solid-state physicists looking to approach the topic of defect charging from an integrated chemical engineering perspective. Researchers and industrial practitioners alike will find its content invaluable for device and process optimization.
Edmund Seebauer is currently Head of Chemical and Biomolecular Engineering at the University of Illinois at Urbana-Champaign. Since 1987 he has been the Chair or co-Chair of numerous sessions on surface chemisty, materials chemistry and microelectronics fabrication for national meetings of AIChE, AVS and MRS.
Meredith Kratzer is working towards a PhD in Chemical & Biomolecular Engineering at the University of Illinois at Urbana-Champaign. She received her B.S. (cum laude) in Chemical Engineering from Cornell University.
Details the current state of knowledge regarding the properties of ionized defects in advanced transistors, photo-active devices, catalysts, and sensors
Date de parution : 12-2008
Ouvrage de 336 p.
Disponible chez l'éditeur (délai d'approvisionnement : 15 jours).
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