Lavoisier S.A.S.
14 rue de Provigny
94236 Cachan cedex
FRANCE

Heures d'ouverture 08h30-12h30/13h30-17h30
Tél.: +33 (0)1 47 40 67 00
Fax: +33 (0)1 47 40 67 02


Url canonique : www.lavoisier.fr/livre/physique/charged-semiconductor-defects-structure-thermodynamics-et-diffusion-engineering-materials-et-processes/seebauer/descriptif_1865012
Url courte ou permalien : www.lavoisier.fr/livre/notice.asp?ouvrage=1865012

Charged semiconductor defects: structure, thermodynamics & diffusion (Engineering materials & processes), Softcover reprint of hardcover 1st ed. 2009 Structure, Thermodynamics and Diffusion Coll. Engineering Materials and Processes

Langue : Français

Auteurs :

Couverture de l’ouvrage Charged semiconductor defects: structure, thermodynamics & diffusion (Engineering materials & processes)
The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect engineering." For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. Charged Semiconductor Defects details the current state of knowledge regarding the properties of the ionized defects that can affect the behavior of advanced transistors, photo-active devices, catalysts, and sensors.
Features: Group IV, III-V, and oxide semiconductors. Intrinsic and extrinsic defects and point defects, as well as defect pairs, complexes and clusters. A crucial reference for materials scientists, surface scientists, electrical engineers, and solid-state physicists looking to approach the topic of defect charging from an integrated chemical engineering perspective. Researchers and industrial practitioners alike will find its content invaluable for device and process optimization.
IntroductionFundamentals of Defect Ionization and TransportExperimental and Computational CharacterizationTrends in Charged Defect BehaviorIntrinsic Defects: StructureIntrinsic Defects: Ionization ThermodynamicsIntrinsic Defects: DiffusionExtrinsic Defects

Edmund Seebauer is currently Head of Chemical and Biomolecular Engineering at the University of Illinois at Urbana-Champaign. Since 1987 he has been the Chair or co-Chair of numerous sessions on surface chemisty, materials chemistry and microelectronics fabrication for national meetings of AIChE, AVS and MRS.

Meredith Kratzer is working towards a PhD in Chemical & Biomolecular Engineering at the University of Illinois at Urbana-Champaign. She received her B.S. (cum laude) in Chemical Engineering from Cornell University.

Details the current state of knowledge regarding the properties of ionized defects in advanced transistors, photo-active devices, catalysts, and sensors

Date de parution :

Ouvrage de 336 p.

15.5x23.5 cm

Disponible chez l'éditeur (délai d'approvisionnement : 15 jours).

210,99 €

Ajouter au panier

Thèmes de Charged semiconductor defects: structure, thermodynamics... :

En continuant à naviguer, vous autorisez Lavoisier à déposer des cookies à des fins de mesure d'audience. Pour en savoir plus et paramétrer les cookies, rendez-vous sur la page Confidentialité & Sécurité.
FERMER