Silicon-Molecular Beam Epitaxy Volume I
Auteur : Kasper E.
Date de parution : 12-2017
17.8x25.4 cm
Thème de Silicon-Molecular Beam Epitaxy :
Mots-clés :
Liquid Metal Ion Source; porous; MIT Group; layers; Alkaline Earth Fluorides; doping; RHEED Pattern; levels; CVD Growth; substrate; Common Base Current Gain; temperatures; Field Effect Transistors; epitaxial; Porous Si; growth; RHEED Oscillation; rheed; MBE Growth; pattern; Hot Electron Transistors; R.A.A; Kubiak; Static Ram; E.H.C; Parker; Electron Beam Evaporators; S.S; Iyer; Stacking Fault; S; S; Iyer; Dopant Incorporation; R; A; A; Kubiak; Si Films; E; H; C; Parker; Condensation Coefficient; F; Allen; Dopant Atoms; H; Ishiwara; Analog Transistors; Julia M; Phillips; Porous Si Layer; Emmanuel Rosencher; Si Flux; S; Luryi; Interface State Density; S; M; Sze; Low Energy Ion Implantation; FET; Misfit Dislocations