Silicon Molecular Beam Epitaxy Volume II
Langue : Anglais
Auteur : Kasper E.
This book focuses on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. It discusses the obstacles any new technology must overcome to be commercially successful with specific references to the challenges confronting Silicon-Molecular Beam Epitaxy.
9. Principles of Heteroepitaxy 10. Epitaxial Silicides 11. Silicon-Based Semiconductor Heterostructures 12. Assessment of Layers 13. Industrial Application: Perspective and Requirements 14. Industrial Application: Possible Approaches 15. Molecular Beam Epitaxy of Silicon Materials: A Bibliography 1962 - 1985
Date de parution : 12-2017
17.8x25.4 cm
Thème de Silicon Molecular Beam Epitaxy :
Mots-clés :
Secondary Ion Mass Spectrometry; misfit; Sim; dislocations; Modulation Doped Field Effect Transistors; epitaxial; Misfit Dislocations; layers; Long Range Strain Field; doping; Strained Layer Epitaxy; modulations; Anodic Sectioning; growth; Critical Layer Thicknesses; leed; Metallic Contamination; pattern; Si Strained Layer; silicide; Epitaxial Layers; J; Murray Gibson; LEED Pattern; Tung Raymond T; Silicide Layers; John C; Bean; Silicide Films; Marek Pawlik; Strained Layer; David Bellavance; TEM Image; J; C; Bean; Carrier Concentration Profiles; R; A; Matula; MBE Growth; Sim Profile; Critical Thickness; Epitaxial Structure; MBE System; Stacking Faults; Sample Preparation; SR
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