Lavoisier S.A.S.
14 rue de Provigny
94236 Cachan cedex

Heures d'ouverture 08h30-12h30/13h30-17h30
Tél.: +33 (0)1 47 40 67 00
Fax: +33 (0)1 47 40 67 02

Url canonique :
Url courte ou permalien :

Molecular Beam Epitaxy (2nd Ed.) From Research to Mass Production

Langue : Anglais

Coordonnateur : Henini Mohamed

Couverture de l’ouvrage Molecular Beam Epitaxy

Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ?how to? on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage.

This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures.

  • Condenses the fundamental science of MBE into a modern reference, speeding up literature review
  • Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research
  • Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

1. Molecular beam epitaxy of transition metal monopnictides

Gavin Richard Bell

2. Migration Enhanced Epitaxy of Low Dimensional Structures

Yoshiji Horikoshi

3. MBE growth of Si-Ge materials and heterostructures

Maksym Myronov

4. SiGeSn MBE

Inga Anita Fischer

5. MBE of Dilute Nitride Optoelectronic Devices

Mircea Guina

6. Nonpolar Cubic III Nitrides: From the Basics of Growth to Device Applications

Donat J. As

7. AlGaN nanowires for deep ultraviolet optoelectronics

Zetian Mi

8. plasma-assisted MBE of (Al,Ga)N layers and heterostructures

Valentin Jmerik

9. InAsBi and InAsSbBi materials

Shane Johnson, Arvind Joshua Shalindar,

10. Molecular beam epitaxy of GaAsBi and related quaternary alloys

Masahiro Yoshimoto, Kunishige Oe Oe,

11. Molecular Beam Epitaxy of IV-VI Compounds: Heterostructures/Superlattices/Devices

Gunther Springholz

12. NIL-based site-control epitaxy Mircea Guina, Teemu Hakkarainen,

13. Droplet epitaxy of nanostructures

Stefano Sanguinetti

14. Epitaxial Growth of Thin Films And Quantum Structures of II-VI Visible-Band Gap Semiconductors

Isaac Hernandez-Calderon

15. MBE-grown wide band gap II-VI semiconductors for intersubband device applications

Aidong Shen

16. ZnO Materials and Devices grown by MBE

Ümit Özgür

17. MBE of Complex Oxides

Roman Engel-Herbert

18. Epitaxial Systems Combining Oxides and Semiconductors

       Gang niu, Bertrand Vilquin,

19. MBE Growth of As and Sb based Ferromagnetic III-V Semiconductors

Fumihiro Matsukura

20. Nanostructures of SiGe and ferromagnetic properties

Kang L. Wang 

21. MBE of Hybrid topological/ insulator/ferromagnetic heterostructures and devices

Samarth .N, Anthony Richardella,

22. Challenges and opportunities in MBE growth of 2D crystals: an overview

       Huili Grace Xing

23. Epitaxy of Graphene and h-BN

      vignaud .D

24. Molecular beam epitaxy of graphene and hexagonal boron nitride

       J. Marcelo J. Lopes, Dominique Vignaud, 

25. MBE of Transition Metal Dichalcogenides and heterostructures

Christopher Hinkle and Christopher Hinkle

26. Growth and Characterization of Fullerene/GaAs Interfaces and C60 Doped GaAs and AlGaAs layers

Jiro Nishinaga

27. Thin Films of Organic Molecules: Interfaces and Epitaxial Growth

Achim Schöll

28. MBE of II-VI Lasers

Sergey V. Ivanov, Sedova IV, Sorokin .SV, 

29. THz Quantum Cascade Lasers

Aaron Maxwell Andrews

30. GaSb lasers grown on Silicon substrate for telecom application

Eric Tournié

31. GaP/Si based photovoltaic devices grown by MBE

Charles Cornet

32. MBE as a Mass Production Technique

Matt Marek 

33. Mass production of optoelectronic devices: LEDs, lasers, VCSELs

Roland Jäger

34. Mass Production of Sensors Grown by MBE

Naohiro Kuze

35. MBE as a Mass Production Enabling Technology for Electronic/Optoelectronic Devices

Yung-Chung Kao

36. Molecular Beam Epitaxy in the Ultra-Vacuum of Space: Present and Near Future

Oleg Pchelyakov

Materials Science and Physics researchers

Dr M. Henini has over 20 years’ experience of Molecular Beam Epitaxy (MBE) growth and has published >700 papers. He has particular interests in the MBE growth and physics of self-assembled quantum dots using electronic, optical and structural techniques. Leaders in the field of self-organisation of nanostructures will give an account on the formation, properties, and self-organization of semiconductor nanostructures.

Date de parution :

Ouvrage de 800 p.

21.6x27.6 cm

Disponible chez l'éditeur (délai d'approvisionnement : 14 jours).

220,63 €

Ajouter au panier
En continuant à naviguer, vous autorisez Lavoisier à déposer des cookies à des fins de mesure d'audience. Pour en savoir plus et paramétrer les cookies, rendez-vous sur la page Confidentialité & Sécurité.