Discrete and Integrated Power Semiconductor Devices Theory and Applications
Auteurs : Benda Vítezslav, Grant Duncan A., Gowar John
* Use of physical models to explain the device structures and functions without complicated mathematical techniques
* Explanation of the structure, function, characteristics and features of the most important discrete and integrated power devices
* Demonstration of the influence of construction and technological parameters on important device characteristics
* Sections on power modules and conditions for reliable operation plus a look at future materials and devices
This valuable reference encompassing the structure, operation and application of power semiconductor devices will benefit both practising electronics engineers and students of power electronics.
Elementary Semiconductor Structures.
Devices, Fabrication and Their Modelling.
Power Semiconductor Device Applications.
Power Diodes.
Bipolar Junction Transistors.
Thyristors: Basic Operating Principles.
Thyristor Types and Applications.
Static Induction Power Devices.
Power MOSFETs.
Power Bipolar-MOS (BIPMOS) Devices.
Power Modules and Integrated Structures.
Conditions for Reliable Operation.
Future Materials and Devices.
Appendix.
Vítezslav Benda and Duncan A. Grant are the authors of Discrete and Integrated Power Semiconductor Devices: Theory and Applications, published by Wiley.
Date de parution : 01-1999
Ouvrage de 432 p.
17.5x25 cm
Thème de Discrete and Integrated Power Semiconductor Devices :
Mots-clés :
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