Single Crystals of Electronic Materials Growth and Properties Woodhead Publishing Series in Electronic and Optical Materials Series
Coordonnateur : Fornari Roberto
1. Introduction 2. Electronic Silicon 3. Solar Silicon 4. Germanium 5. Silicon Carbide 6. III-Arsenides 7. III-Phosphides 8. III-Antiomides 9. CdTe and CdZnTe 10. II-sulphides and II-selenides 11. Diamond 12. GaN 13. AIN 14. ZnO 15. Al2O3 16. Ga2O3 17. In2O3 18. SnO2
Material scientists and researchers, academic and industry crystal growth experts, academic and industry semiconductor device experts, and physicists.
- Presents the latest research and most comprehensive overview of both standard and novel semiconductors
- Provides a systematic examination of important electronic materials, including their applications, growth methods, properties, technologies and defect and doping issues
- Takes a close look at emerging materials, including wide bandgap oxides, nitrides and diamond
Date de parution : 09-2018
Ouvrage de 594 p.
15x22.8 cm
Thème de Single Crystals of Electronic Materials :
Mots-clés :
A1 hot zone; Alloys; AlN; Ammonothermal; Applications; Arsenide; B1 silicon; B2 Czochralski method; Basic properties; Bulk crystal growth; Bulk crystal; Cadmium telluride; Computing modeling; Crystal growth; Crystal properties; Czochralski; Defects; Diamond; Directional solidification; Dislocations; Doping; Electronic structure; Electrooptics; Facet; Fe doping; Field-effect transistors; Gallium nitride; Gallium oxide; Gamma-rays; GaN; Germanium; Growth methods; Growth of artificial diamond; Growth technologies; High-performance multicrystalline silicon; High-power applications; HVPE; Impurity segregation; In2O3Indium oxide; Indium phosphide; Infrared imaging; Interface concavity; Interface instability; Ionicity; Laser; LEDs; Luminescence; Melt growth; Microwave; Minority-carrier lifetime; Mono-like; Na flux; n-type and p-type doping; Oxide electronics; Phosphor; Photodetectors; Power consumption; Properties; Resonant PES; RF devices; Sandwich method; Sapphire; Scintillators; Selenides; Semiconductor; Semiconductors; Semiinsulating; SiC seeds; Silicon carbide; Silicon; Single crystal; SnO2SnOx; Solar cells; Sublimation growth; Substrate requirements; Substrate; Sulfides; TCO; Thermodynamic properties; Thermodynamics; Throughput; Tisapphire; Twinning defects; Vertical gradient freeze; Wafer; X-rays; Zinc telluride; Zinc�selenide compounds; Zinc�sulfide compounds