Low-Frequency Noise in Advanced MOS Devices, Softcover reprint of hardcover 1st ed. 2007 Analog Circuits and Signal Processing Series

Low-Frequency Noise in Advanced CMOS Devices begins with an introduction to noise, describing the fundamental noise sources and basic circuit analysis. The characterization of low-frequency noise is discussed in detail and useful practical advice is given. The various theoretical and compact low-frequency (1/f) noise models in MOS transistors are treated extensively providing an in-depth understanding of the low-frequency noise mechanisms and the potential sources of the noise in MOS transistors. Advanced CMOS technology including nanometer scaled devices, strained Si, SiGe, SOI, high-k gate dielectrics, multiple gates and metal gates are discussed from a low-frequency noise point of view. Some of the most recent publications and conference presentations are included in order to give the very latest view on the topics. The book ends with an introduction to noise in analog/RF circuits and describes how the low-frequency noise can affect these circuits.

Authors. Preface. Acknowledgments. Chapter 1 Fundamental noise mechanisms. Chapter 2 Noise characterization. Chapter 3 1/f noise in MOSFETs - origins and modelling. Chapter 4 1/f Noise performance of advanced CMOS devices. Chapter 5 Introduction to noise in RF/analog circuits. Appendix I List of Symbols. Appendix II List of Acronyms. Appendix III Solutions to problems. Index.

The Book will be based on the following work which also is the publication list for Dr Martin von Haartman; Ph. D. Thesis: Low-frequency noise characterization, evaluation and modeling of advanced Si- and SiGe-based CMOS transistors, xx, 124 pages, 9 appended papers, Stockholm, April 2006. http://www.diva-portal.org/kth/theses/abstract.xsql?dbid=3888

Journals:

M. von Haartman, D. Wu, B. G. Malm, P.-E. Hellström, S.-L. Zhang and M. Östling, "Low-frequency noise in Si_0.7Ge_0.3 surface channel pMOSFETs with ALD HfO₂/Al₂O₃ gate dielectrics", Solid-State Electronics, vol. 48, pp. 2271-2275, 2004.

D. Wu, M. von Haartman, J. Seger, E. Tois, M. Tuominen, P.-E. Hellström, M. Östling, S.-L. Zhang, "Ni-salicided CMOS with a poly-SiGe/Al2O3/HfO2/Al2O3 gate stack", Microelectron Eng., vol. 77, pp. 36-41, 2005.

M. von Haartman, J. Westlinder, D. Wu, B. G. Malm, P.-E. Hellström, J. Olsson, S.-L. Zhang, M. Östling, "Investigation of low-frequency noise and Coulomb scattering in Si_0.8Ge_0.2 surface channel pMOSFETs with ALD Al₂O₃ gate dielectrics", Solid-State Electronics, vol. 49, pp. 907-914, 2005.

J. Seger, P.-E. Hellström, J. Lu, B. G. Malm, M. von Haartman, M. Östling, and S.-L. Zhang, "Lateral enroachment of Ni-silicide in the source/drain regions on ultra-thin silicon-on-insulator", Appl. Phys. Lett., vol. 86, 253507, 2005.

C. Isheden, P.-E. Hellström, M. von Haartman, H. H. Radamson, and M. Östling, "pMOSFETs with recessed and selectively regrown Si_1-xGe_x source/drain junctions", Mat. Sci. Sem. Proc., vol. 8, pp. 359-362, 2005.

M. von Haartman, B. G. Malm, and M. Östling, "A comprehensive study on Low-frequency noise and mobility in Si and SiGe pMOSFETs with high-k gate dielectrics and TiN gate", IEEE Trans. Electron Devices, vol. 53, pp. 836-843,April 2006.

J. Hållstedt, M. von Haartman, P.-E. Hellström, M