Gallium Nitride (GaN) Physics, Devices, and Technology Devices, Circuits, and Systems Series
Coordonnateur : Medjdoub Farid
Addresses a Growing Need for High-Power and High-Frequency Transistors
Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors.
Explores Recent Progress in High-Frequency GaN Technology
Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends.
In addition, the authors:
- Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects
- Examine GaN technology while in its early stages of high-volume deployment in commercial and military products
- Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology
- Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers
A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
GaN High-Voltage Power Devices. AlGaN/GaN High-Electron-Mobility Transistors Grown by Ammonia Source Molecular Beam Epitaxy. Gallium Nitride Transistors on Large-Diameter Si (111) Substrate. GaN-HEMT Scaling Technologies for High-Frequency RF and Mixed Signal Applications. Group III–Nitride Microwave Monolithically Integrated Circuits. GaN-Based Metal/Insulator/Semiconductor-Type Schottky. Hydrogen Sensors. InGaN-Based Solar Cells. III-Nitride Semiconductors: New Infrared Intersubband Technologies. Gallium Nitride–Based Interband Tunnel Junctions. Trapping and Degradation Mechanisms in GaN-Based HEMTs.
Farid Medjdoub is a CNRS senior scientist at IEMN in France. He earned his Ph.D in electrical engineering from the University of Lille in 2004, and worked as a research associate at the University of Ulm in Germany before joining IMEC. Medjdoub’s research interests include the design, fabrication, and characterization of innovative GaN-based devices. He is the author and co-author of more than 100 articles, and holds several patents deriving from his research. In addition, he serves as a reviewer for IEEE journals, is a TPC member in several conferences, and is part of the French observatory of wide-bandgap devices.
Krzysztof (Kris) Iniewski
Date de parution : 07-2017
15.6x23.4 cm
Date de parution : 10-2015
15.6x23.4 cm
Thèmes de Gallium Nitride (GaN) :
Mots-clés :
GaN HEMTs; GaN; GaN Heterostructures; High-Voltage Power Devices; HEMT Structure; AlGaN; HEMTs; High-Electron-Mobility Transistors; Field Effect Transistors; Ammonia; Drain Current; Molecular Beam Epitaxy; GaN Buffer; Transistors; GaN Layer; Scaling; GaN HEMT Structure; High-Frequency RF; AIP Publishing LLC; Mixed Signal; GaN Substrate; Nitride Microwave Monolithically Integrated Circuits; Power Added Efficiency; Insulator; AlGaN Barrier; Semiconductor-Type Schottky Hydrogen Sensors; Schottky Diode; Solar Cells; GaN Transistor; Nitride Semiconductors; AlN Nucleation Layer; Intersubband (ISB); Breakdown Voltage; Gallium Nitride–Based Interband Tunnel Junctions; Hydrogen Sensors; Degradation Mechanisms; GaN MQWs; HEMT; PN Junction; Quantum Well; ISB Absorption; Gallium Nitride; ISB Transition; Joachim Würfl; IEEE Electron Device Letter; Yvon Cordier; IEEE Trans; Subramaniam Arulkumaran; MMIC; Geok Ing Ng; Keisuke Shinohara; Rüdiger Quay; Ching-Ting Lee; Hsin-Ying Lee; Li-Ren Lou; Ezgi Dogmus; Mark Beeler; Eva Monroy; Siddharth Rajan; Sriram Krishnamoorthy; Akyol Fatih; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni; microelectronics; radio frequency semiconductor devices; optoelectronics; interband tunnel junction; gallium nitride technology