L’édition demandée n’est plus disponible, nous vous proposons la dernière édition.
Tunneling Field Effect Transistor Technology, Softcover reprint of the original 1st ed. 2016
Langue : Anglais
Coordonnateurs : Zhang Lining, Chan Mansun
This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.
Steep Slope Devices and TFETs.- Tunnel-FET Fabrication and Characterization.- Compact Models of TFETs.- Challenges and Designs of TFET for Digital Applications.- Atomistic Simulations of Tunneling FETs.- Quantum Transport Simulation of III-V TFETs with Reduced-Order k ·p Method.- Carbon Nanotube TFETs: Structure Optimization with Numerical Simulation.
comprehensive reference to tunneling field effect transistors (TFETs) all aspects of TFETs, from device process to modeling and applications Enables design of power-efficient integrated circuits, with low power consumption TFETs
Date de parution : 04-2018
Ouvrage de 213 p.
15.5x23.5 cm
Thème de Tunneling Field Effect Transistor Technology :
© 2024 LAVOISIER S.A.S.