Semiconductor Nanowires Materials, Synthesis, Characterization and Applications Woodhead Publishing Series in Electronic and Optical Materials Series
Coordonnateurs : Arbiol J, Xiong Q
Part 1 Semiconductor materials for nanowires Group IV nanowires: Silicon/Germanium II-VI semiconductor nanowires: ZnO II-VI semiconductor nanowires: chalcogenides (II-S, II-Se and II-Te) III-V semiconductor nanowires: arsenides (As-based; III-As) III-V semiconductor nanowires: nitrides (N-based; III-N)
Part 2 Growth and synthesis of semiconductor nanowires Epitaxial growth of semiconductor nanowire alloys and heterostructures Solution growth of semiconductor nanowires Metal-organic vapour phase epitaxy (MOVPE) growth of semiconductor nanowires Molecular beam epitaxy (MBE) growth of semiconductor nanowires Self-organized nanowire formation
Part 3 Characterizing the properties of semiconductor nanowires Quantum transport in semiconductor nanowires Measuring the properties of semiconductor nanowires with transmission electron microscopy (TEM) Electrical characterization of semiconductor nanowires by scanning probe microscopies (SPM) Using atom probe tomography in the study of semiconductor nanowires; Optoelectronic properties of semiconductor nanowires Semiconductor nanowires studied by Raman scattering Scanning cathodoluminescence (CL) spectroscopy of nanowires Photoluminescence of semiconductor nanowires
Part 4 Applications of semiconductor nanowires Semiconductor nanowires for solar cells Semiconductor nanowire battery electrodes Semiconductor nanowires for sensors Nanowire for advanced optoelectronics Plasmonic nanowire networks: from waveguiding to passive and active nanoscale optical devices Nanowires for nano-electro-mechanical-systems (NEMS) Nanowires and their applications in biology
- Explores a selection of advanced materials for semiconductor nanowires
- Outlines key techniques for the property assessment and characterization of semiconductor nanowires
- Covers a broad range of applications across a number of fields
Date de parution : 04-2015
Ouvrage de 572 p.
15x22.8 cm
Thèmes de Semiconductor Nanowires :
Mots-clés :
Absorption; Array; Atom probe tomography; Battery; Biosensors; Cellular�nanotechnology interface; Charge accumulation; Coaxial nanowire; Controlled alignment; Crystallographic properties; Device fabrication; Dopants; Doping; Doping characterization; EELS; Electrochemical device; Electron holography; Electron microscopy; Electron tomography; Electron transport; Electronic band structure; Electronic transport; Emission bands; Excitation density; Excitons; Field effect transistor; Field-effect transistors; HAADF; Heterosubstrates; Hierarchical nanowire; Hole transport; Hybrid nanowire; II-VI semiconductor nanowires; In situ probing; In situ TEM; Interface; Interface-induced correlation effects; Label-free detection; Landauer approach; Magnetic fields; Microcrystals; Modeling; Nanolasers; Nanophotonics; Nanoring; Nanowire; Nanowire array; Nanowire growth; Nanowire positioning; Nanowire transistors; Nanowires; Nitride alloys; Non-destructive analysis; Nonequilibrium Green's function; Opelectronics; Ordered arrays; Phonon scattering; Photoconductance; Photocurrent; Photodetection; Photoelectric effects; Photoelectrochemical; Photonic�plasmonic coupling; Photovoltaic conversion; Photovoltaics; Plasmon-exciton coupling; Polarization; Polarization field; Porous nanowire; Quantum transport; Rational assembly; Scanning cathodoluminescence microscopy; Scanning current mapping (SPCM); Scanning tunneling microscopy; Scanning-probe microscopy; Self-heating; Semiconducting nanowires; Semiconductor; Semiconductor nanowires; Sensitivity; Sensors; Silicon nanowires; Single ionized dopant; Solar cell devices; Solar cells; Solution growth; Surface photovoltage spectroscopy (SPV; bandgap engineering); Surface plasmon; Surface structure; Sustainable energy; TEM; Theory; Thermoelectric effect; Transport dynamics; Tunneling spectroscopy; Waveguides; Waveguiding; XEDS; Zinc oxide