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Secondary Ion Mass Spectrometry SIMS V, Softcover reprint of the original 1st ed. 1986 Proceedings of the Fifth International Conference, Washington, DC, September 30 - October 4, 1985 Springer Series in Chemical Physics Series, Vol. 44

Langue : Anglais

Coordonnateurs : Benninghoven Alfred, Colton Richard J., Simons David S., Werner Helmut W.

Couverture de l’ouvrage Secondary Ion Mass Spectrometry SIMS V
This volume contains the proceedings of the Fifth International Confer­ ence on Secondary Ion Mass Spectrometry (SIMS V), held at the Capitol Holiday Inn, Washington, DC, USA, from September 30 to October 4, 1985. The conference was the fifth in a series of conferences held bienni­ ally. Previous conferences were held in Miinster (1977), Stanford (1979), Budapest (1981), and Osaka (1983). SIMS V was organized by Dr. R. J. Colton of the Nayal Research Lab­ oratory and Dr. D. S. Simons of the National Bureau of Standards un­ der the auspices of the International Organizing Committee chaired by Prof. A. Benninghoven of the Universitat Miinster. Dr. Richard F. K. Herzog served as the honorary chairman of SIMS V. While Dr. Herzog is best known to the mass spectrometry community for his theoretical development of a mass spectrometer design, known as the Mattauch-Herzog geometry, he also made several early and impor­ tant contributions to SIMS. In 1949, Herzog and Viehbock published a description of the first instrument designed to study secondary ions pro­ duced by bombardment from a beam of ions generated in a source that was separated from the sample by a narrow tube. Later at the GCA Cor­ poration, he brought together a team of researchers including H. J. Liebl, F. G. Riidenauer, W. P. Poschenrieder and F. G. Satkiewicz, who designed and built, and carried out applied research with the first commercial ion microprobe.
I Retrospective.- The Growth of Secondary Ion Mass Spectrometry (SIMS): A Personal View of Its Development.- II Fundamentals.- Density-Functional Studies of the Atom-Surface Interaction and the Ionization Probability of Sputtered Atoms.- Origin of the Chemical Enhancement of Positive Secondary Ion Yield in SIMS.- Ion Pair Production as Main Process of SIMS for Inorganic Solids.- Sputtering and Secondary Ion Emission From Metals and Alloys Subjected to Oxygen Ion Bombardment.- Measurements of the SIMS Isotope Effect.- SIMS Study of Self-Diffusion in Liquid Tin and of Associated Isotope Effects.- Silicon-Induced Enhancement of Secondary Ion Emission in Silicates: A Study of the Matrix Effects.- Ionization Probabilities of Polycrystalline Metal Surfaces.- Reactivity and Structure of Sputtered Species.- Local Thermal Equilibrium Model of Molecular Secondary Ion Emission.- Time-of-Flight Investigations of Secondary Ion Emission from Metal Halides.- Multicharged Secondary Ions from Light Metals (Mg, Al, Si).- Population of Ion Clusters Sputtered from Metallic Elements with 10 keV Ar+.- Ejection and Ionization Efficiencies in Electron and Ion-Stimulated Desorption from Covalently Bound Surface Structures.- III Symposium: Detection of Sputtered Neutrals.- Electron Gas SNMS.- Glow Discharge Mass Spectrometry.- Electron Beam Postionization of Sputtered Neutrals.- General Postionization of Sputtered and Desorbed Species by Intense Untuned Radiation.- Multi-Photon Resonance Ionization of Emitted Particles.- Post-Ionization of Sputtered Particles: A Brief Review.- Quantitative Analysis Using Sputtered Neutrals in an Ion Microanalyser.- Quantitative Analysis of Iron and Steel by Mass Spectrometry.- Ion Microprobe Mass Spectrometry Using Sputtering Atomization and Resonance Ionization.- IV Detection Limits and Quantification.- Memory Effects in Quadrupole SIMS.- Correction for Residual Gas Background in SIMS Analysis.- Cross-Calibration of SIMS Instruments for Analysis of Metals and Semiconductors.- On-Line Ion Implantation: The SIMS Primary Ion Beam for Creation of Empirical Quantification Standards.- Matrix Effects in the Quantitative Elemental Analysis of Plastic-Embedded and Ashed Biological Tissue by SIMS.- Reproducible Quantitative SIMS Analysis of Semiconductors in the Cameca IMS 3F.- V Instrumentation.- Imaging SIMS at 20 nm Lateral Resolution: Exploratory Research Applications.- Use of a Compact Cs Gun Together with a Liquid Metal Ion Source for High Sensitivity Submicron SIMS.- Secondary Ion Mass Spectrometer with Liquid Metal Field Ion Source and Quadrupole Mass Analyzer.- Evaluation of a New Cesium Ion Source for SIMS.- Survey of Alkali Primary Ion Sources for SIMS.- Non-Oxygen Negative Primary Ion Beams for Oxygen Isotopic Analysis in Insulators.- A New SIMS Instrument: The Cameca IMS 4F.- The Emission Objective Lens Working as an Electron Mirror: Self Regulated Potential at the Surface of an Insulating Sample.- 20 K-Cryopanel-Equipped SIMS Instrument for Analysis Under Ultrahigh Vacuum.- Improvement of an Ion Microprobe Mass Analyzer (IMMA).- A High-Performance Analyzing System for SIMS.- Characterization of Electron Multipliers by Charge Distributions.- Automated Collection of SIMS Data with Energy Dispersive X-Ray Analysis Hardware.- Software and Interfaces for the Automatic Operation of a Quadrupole SIMS Instrument.- Computer-Aided Design of Primary and Secondary Ion Optics for a Quadrupole SIMS Instrument.- Time-of-Flight Instrumentation for Laser Desorption, Plasma Desorption and Liquid SIMS.- Coincidence Measurements with the Manitoba Time-of-Flight Mass Spectrometer.- High Resolution TOF Secondary Ion Mass Spectrometer.- VI Techniques Closely Related to SIMS.- Evaluation of Accelerator-based Secondary Ion Mass Spectrometry for the Ultra-trace Elemental Characterization of Bulk Silicon.- Quantitative Analysis with Laser Microprobe Mass Spectrometry.- Laser-Probe Microanalysis: Aspects of Quantification and Applications in Materials Science.- Some Aspects of Laser-Ionisation Mass-Analysis (LIMA) in Semiconductor Processing.- VII Combined Techniques and Surface Studies.- The Use of SSIMS and ISS to Examine Pt/TiO2 Surfaces.- Secondary Ion and Auger Electron Emission by Ar+ Ion Bombardment on Al-Fe Alloys.- Characterization of Planar Model Co-Mo / ?-Al2O3 Catalysts by SIMS, ESCA, and AES.- Search for SiO2 in Commercial SiC.- SIMS/XPS Studies of Surface Reactions on Rh(111) and Rh(331).- SSIMS — A Powerful Tool for the Characterisation of the Adsorbate State of CO on Metallic and Bimetallic Surfaces.- Energy and Angle-Resolved SIMS Studies of Cl2 Adsorption on Ag{110}; Evidence for Coverage Dependent Electronic Structure Rearrangements.- Molecular Secondary Ion Emission from Different Amino Acid Adsorption States on Metals.- VIII Ion Microscopy and Image Analysis.- A High-Resolution, Single Ion Sensitivity Video System for Secondary Ion Microscopy.- Dynamic Range Consideration for Digital Secondary Ion Image Depth Profiling.- Digital Slit Imaging for High-Resolution SIMS Depth Profiling.- Lateral Elemental Distributions on a Corroded Aluminum Alloy Surface.- Improved Spatial Resolution of the CAMECA IMS-3f Ion Microscope.- Video Tape System for Ion Imaging.- Application of a Framestore Datasystem in Imaging SIMS.- Chemical Characterisation of Insulating Materials Using High Spatial Resolution SSIMS — An Analysis of the Problems and Possible Solutions.- Application of Digital SIMS Imaging to Light Element and Trace Element Mapping.- SIMS Imaging of Silicon Defects.- IX Depth Profiling and Semiconductor Applications.- Quantitative SIMS Depth Profiling of Semiconductor Materials and Devices.- High-Accuracy Depth Profiling in Silicon to Refine SUPREM-III Coefficients for B, P, and As.- The Use of Silicon Structures with Rapid Doping Level Transitions to Explore the Limitations of SIMS Depth Profiling.- Temperature Dependent Broadening Effects in Oxygen SIMS Depth Profiling.- Sputter-Induced Segregation of As in Si During SIMS Depth Profiling.- SIMS Measurements of As at the SiO2/Si Interface.- Elimination of Ion-Bombardment Induced Artefacts in Compound Identification During Thin Film Analysis: Detection of Interface Carbides in “Diamond-Like” Carbon Films on Silicon.- Gibbsian Segregation During the Depth Profiling of Copper in Silicon.- Species-Specific Modification of Depth Resolution in Sputtering Depth Profiles by Oxygen Adsorption.- Selective Sputtering and Ion Beam Mixing Effects on SIMS Depth Profiles.- The Effect of Temperature on Beam-Induced Broadening in SIMS Depth Profiling.- Variable Angle SIMS.- Dependence of Sputter Induced Broadening on the Incident Angle of the Primary Ion Beam.- SIMS Depth Profiling with Oblique Primary Beam Incidence.- Deterioration of Depth Resolution in Sputter Depth Profiling by Raster Scanning an Ion Beam at Oblique Incidence and Constant Slew Rate.- SIMS Analysis of Contamination Due to Ion Implantation.- Analysis of Surface Contamination from Chemical Cleaning and Ion Implantation.- Quantification of SIMS Dopant Profiles in High-Dose Oxygen-Implanted Silicon, Using a Simple Two-Matrix Model.- Isotope Tracer Studies Using SIMS.- High Dynamic Range SIMS Depth Profiles for Aluminium in Silicon-on-Sapphire.- Charge Compensation During SIMS Depth Profiling of Multilayer Structures Containing Resistive and Insulating Layers.- Ion Deposition Effects in and Around Sputter Craters Formed by Cesium Primary Ions.- SIMS Depth Profiling of Si in GaAs.- High Purity III-V Compound Analyses by Modified CAMECA IMS 3F.- Depth Profiling of Dopants in Aluminum Gallium Arsenide.- Depth Resolution in Profiling of Thin GaAs-GaA1As Layers.- Elemental Quantification Through Thin Films and Interfaces.- Matrix Effect Quantification for Positive SIMS Depth Profiling of Dopants in InP/InGaAsP/InGaAs Epitaxial Heterostructures.- A Comparison of Electron-Gas SNMS, RBS and AES for the Quantitative Depth Profiling of Microscopically Modulated Thin Films.- Characterization of Silicides by the Energy Distribution of Molecular Ions.- Investigation of Interfaces in a Ni/Cr Multilayer Film with Secondary Ion Mass Spectrometry.- Sputter Depth Profiles in an Al-Cr Multilayer Sample.- SIMS Depth Profiling of Multilayer Metal-Oxide Thin Films — Improved Accuracy Using a Xenon Primary Beam.- X Metallurgical Applications.- Metallurgical Applications of SIMS.- Sputtering of Au-Cu Thin Film Alloys.- Hydrogen Profiling in Titanium.- The Application of SIMS and Other Techniques to Study the Anodized Surface of a Magnesium Alloy.- Incorporation of Chromium in Sputtered Copper Films and Its Removal During Wet Chemical Etching.- Application of SIMS to the Study of a Corrosion Process — Oxidation of Uranium by Water.- SIMS Trace Detection of Heavy Elements in High-Speed Rotors.- Quantitative Analysis of Zn-Fe Alloy Electrodeposit on Steel by Secondary Ion Mass Spectrometry.- SIMS Analysis of Zn-Fe Alloy Galvanized Layer.- XI Biological Applications.- Biological Microanalysis Using SIMS — A Review.- Observations Concerning the Existence of Matrix Effects in SIMS Analysis of Biological Specimens.- Ion Microanalysis of Frozen-Hydrated Cultured Cells.- Imaging Intracellular Elemental Distribution and Ion Fluxes in Cryofractured, Freeze-Dried Cultured Cells Using Ion Microscopy.- Cellular Microlocalization of Mineral Elements by Ion Microscopy in Organisms of the Pacific Ocean.- Quantitative SIMS of Prehistoric Teeth.- XII Geological Applications.- Ion Probe Determination of the Abundances of all the Rare Earth Elements in Single Mineral Grains.- Ion Microprobe Studies of the Magnesium Isotopic Abundance in Allende and Antarctic Meteorites.- Rock and Mineral Analysis by Accelerator Mass Spectrometry.- XIII Symposium: Particle-Induced Emission from Organics.- Organic Secondary Ion Mass Spectrometry: Theory, Technique, and Application.- Mechanisms of Organic Molecule Ejection in SIMS and FABMS.- A Thermodynamic Description of 252-Cf-Plasma Desorption.- Laser Desorption Mass Spectrometry. A Review.- Time-of-Flight Measurements in Secondary Ion Mass Spectrometry.- Fast Atom Bombardment Mass Spectrometry of Biomolecules.- Solid Sample-SIMS on Biomolecules with Fast Ion Beams from the Uppsala EN-Tandem Accelerator.- Fourier Transform Mass Spectrometry for High Mass Applications.- XIV Organic Applications Including Fast Atom Bombardment Mass Spectrometry.- Energy Distribution of Secondary Organic Ions Emitted by Amino Acids.- Analytical Application of a High Performance TOF-SIMS.- Organic Secondary Ion Intensity and Analyte Concentration.- Characteristics of Ion Emission in Desorption Ionization Mass Spectrometry.- Some Aspects of the Chemistry of Ionic Organo-Alkali Metal Halide Clusters Formed by Desorption Ionization.- Detection of Biomolecules by Derivatization/SIMS.- Solvent Selection and Modification for FAB Mass Spectrometry.- The Use of Negative Ion Fast Atom Bombardment Mass Spectrometry for the Detection of Esterified Fatty Acids in Biomolecules.- Fast-Atom Bombardment Mass Spectra of O-Isopropyl Oligodeoxyribonucleotide Triesters.- Characterization of Biomolecules by Fast Atom Bombardment Mass Spectrometry.- Application of Fast Atom Bombardment and Tandem Mass Spectrometry to the Differentiation of Isomeric Molecules of Biological Interest.- Fragmentation of Heavy Ions (5000 to 7000 Daltons) Generated by PD and FAB.- Amino Acid Sequencing of Norwegian Fresh Water Blue-Green Algal (Microcystis Aeruginosa) Peptide by FAB-MS/MS Technique.- Static SIMS Studies of Molecular and Macromolecular Surfaces: Ion Formation Studies.- TOF-SIMS of Polymers in the Range of M / Z = 500 to 5000.- Secondary Ion Mass Spectrometry of Modified Polymer Films.- Application of SIMS Technique to Industrially Used Organic Materials.- Empirical Study of Primary Ion Energy Compared with the Abundance of Polymer Fragment Ions.- Comparison of Laser Mass Spectra Obtained at Ambient Conditions vs. Sample Freezing.- Surface Analysis by Laser Desorption of Neutral Molecules with Fourier Transform Mass Spectrometry Detection.- Index of Contributors.

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