Reliability and Failure of Electronic Materials and Devices (2nd Ed.)
Auteurs : Ohring Milton, Kasprzak Lucian
2. Electronic Devices: Materials Properties Determine How They Operate and Are Fabricated
3. Defects, Contamination and Yield
4. The Mathematics of Failure and Reliability
5. Mass Transport-Induced Failure
6. Electronic Charge-Induced Damage
7. Environmental Damage to Electronic Products
8. Packaging Materials, Processes, and Stresses
9. Degradation of Contacts and Packages
10. Degradation and Failure of Electro-Optical and Magnetic Materials and Devices
11. Characterization and Failure Analysis of Material, Devices and Packages
12. Future Directions and Reliability Issues
In 1988, Dr Lucian Kasprzak became an IEEE Fellow “For contributions to very-largescale-integrated devices through the integration of reliability physics with process development. He discovered the hot-electron effect in short channel field-effect transistors, while at IBM in 1973. From 1992 to 1996, he was Associate Professor of Physics and Engineering Science at Franciscan University. He retired from IBM in 1995 after 30 years. In 1996, he joined Sterling Diagnostic Imaging as Reliability Manager for the Direct Radiography Program. He became Director of Reliability at Direct Radiography Corp. in 1997. Early in 2001 he became an independent Reliability Consultant.
- Covers all major types of electronics materials degradation and their causes, including dielectric breakdown, hot-electron effects, electrostatic discharge, corrosion, and failure of contacts and solder joints
- New updated sections on "failure physics," on mass transport-induced failure in copper and low-k dielectrics, and on reliability of lead-free/reduced-lead solder connections
- New chapter on testing procedures, sample handling and sample selection, and experimental design
- Coverage of new packaging materials, including plastics and composites
Date de parution : 10-2014
Ouvrage de 758 p.
15x22.8 cm
Thèmes de Reliability and Failure of Electronic Materials and Devices :
Mots-clés :
Avalanche photodiodes; Catastrophic optical damage; Charge carriers; Circuit board; Conductors; Constriction resistance; Contamination; Corrosion; Damage; Dark-line defects; Defects; Diffusion; Electrical continuity; Electro-optical devices; Electroluminescence; Electromigration; Electronic devices; Flip chip; Focused ion beams (FIB); Grain boundaries; IC chip; Integrated circuit; Integrated circuits; Light-emitting diode; Light-emitting diodes; Lithography; Normalised degradation rate; p-n junction; Reliability; Scanning Acoustic Microscopy (SAM); Solid-state devices; Thermomigration; Vacancy; Valence band; Voltage; Water vapor; Wire bond; X-radiography