IEEE international electron devices meeting proceeding 1999 (IEDM), Washington, Dec. 5/8 1999

Continuing a 45-year tradition as the leading forum for the presentation of research and development in the area of electron devices and their applications. Attended by the world's foremost experts in electron devices, this conference considers all the various types of electron devices available, including electron tubes, solid-state devices, and power devices. Also detailed are displays, sensors, processing, high voltage devices, and quantum and vacuum electronics.

Integrated Circuits and Manufacturing, CMOS Devices, CMOS and Interconnect Reliability, Detectors, Sensors and Displays, Process Technology, Modeling and Simulation, Solid State Devices, Quantum Electronics and Compound Semiconductors, Advances DRAMS and Embedded DRAMS, Novel CMOS Devices, CMOS Device Reliability, Devices for Displays, High K Gate Dielectrics, Device Models for Circuit Simulation, Power Devices, Future Electronics, EEPROM, FRAM and SRAM Technologies, High Performance/High Voltage TFTs, Silicon Nanoscale Devices, High Frequency Power Devices, High Performance CMOS, Thin Gate Oxide Reliability, Manufacturing and Metrology, Junction and Substrate Engineering, Device Modeling, Silicon Heterojunction and Related Devices, Light Sources and Detectors, Advanced Interconnect Technology, Oxide Modeling, Memory Technology, System on a Chip/RF ICs, Device Physics and Characterization, Sensors for Imaging, and much more!