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Ferroelectric Thin Films, Softcover reprint of hardcover 1st ed. 2005 Basic Properties and Device Physics for Memory Applications Topics in Applied Physics Series, Vol. 98

Langue : Anglais

Coordonnateurs : Okuyama Masanori, Ishibashi Yoshihiro

Couverture de l’ouvrage Ferroelectric Thin Films

Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.

Theoretical Aspects of Phase Transitions in Ferroelectric Thin Films.- Chemical Solution Deposition of Layered-Structured Ferroelectric Thin Films.- PB-Based Ferroelectric Thin Films Prepared by MOCVD.- Spontaneous Polarization and Crystal Orientation Control of MOCVD PZT and Bi4Ti3O12-Based Films.- Rhombohedral PZT Thin Films Prepared by Sputtering.- Scanning Nonlinear Dielectric Microscope.- Analysis of Ferroelectricity and Enhanced Piezoelectricity near Morphotropic Phase Boundary.- Correlation between Domain Structures in Dielectric Properties in Single Crystals of Ferroelectric Solid Solutions.- Relaxor Behaviors in Perovskite-Type Dielectric Compounds.- Artificial Control of Ordered/Disordered State of B-Site Ions in Ba(Zr,Ti)O3 by a Superlattice Technique.- Physics of Ferroelectric Interface: An Attempt to Nano-Ferrolectric Physics.- Preparation and Property of Ferroelectic-Insulator-Semiconductor Junction Using YMNO3 Thin Film.- Improvement of Memory Retention in Metal-Ferroelectric-Insulator-Semiconductor (MFIS) Structure.

Most advanced status report in this field of research on the market

Date de parution :

Ouvrage de 244 p.

15.5x23.5 cm

Disponible chez l'éditeur (délai d'approvisionnement : 15 jours).

Prix indicatif 210,99 €

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