Defects in Semiconductors Semiconductors and Semimetals Series
Auteur : ROMANO Lucia
This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields.
The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths.
- Role of Defects in the Dopant Diffusion in Si
- Electron and Proton Irradiation of Silicon
- Ion Implantation Defects and Shallow Junctions in SI and GE
- Defective Solid-phase Epitaxial Growth of Si
- Nanoindentation of Silicon and Germanium
- Analytical Techniques for Electrically Active Defect Detection
- Surface and Defect States in Semiconductors Investigated by Surface Photovoltage
- Point Defects in ZnO
- Point Defects in GaN
- Point Defects in Silicon CarbideNaoya Iwamoto and Bengt G. Svensson
Peter Pichler
Arne Nylandsted Larsen and Abdelmadjid Mesli
Enrico Napolitani and Giuliana Impellizzeri
Nicholas G. Rudawski, Aaron G. Lind and Thomas P. Martin
Mangalampalli S. R. N. Kiran, Bianca Haberl, Jodie E. Bradby and James S. Williams
Eddy Simoen, Johan Lauwaert and Henk Vrielinck
Daniela Cavalcoli, Beatrice Fraboni and Anna Cavallini
Matthew D. McCluskey
Michael A. Reshchikov
students, researchers from both academics and industrial companies dealing with semiconductor or semiconductor applications
- Expert contributors
- Reviews of the most important recent literature
- Clear illustrations
- A broad view, including examination of defects in different semiconductors
Date de parution : 05-2015
Ouvrage de 458 p.
15x22.8 cm
Thèmes de Defects in Semiconductors :
Mots-clés :
Defects; semiconductor; Silicon; Germanium; ZnO; GaN; SiC; ion implantation; electrical properties; diffusion