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Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 September, 1995 Proceedings of the Twenty-Second International Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August to 2 September 1995

Langue : Anglais

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Couverture de l’ouvrage Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 September, 1995
Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.
International symposium on compound semiconductors award and Heinrich Welker gold medal. Young scientist award. Preface. Plenary and perspective. Epitaxy and processing technologies. Characterization. High power, high temperature devices. Heterojunction transistors. Quantum effect. Nanoelectronics and nanophotonics. Optoelectronic and optical devices. Visible emitters. Modelling and simulation. Late papers. Keyword index. Author index.
Professional
Institute of Physics Conference
Taking its theme as 'Technologies for Future Electronics and Optoelectronics Industries', the 22nd International Symposium on Compound Semiconductors, held on Cheju Island, Korea, 29 August - 2 September 1995, continued the tradition established by its predecessor symposia on Gallium Arsenide and Related Compounds of reporting the most up-to-date research and development work in all aspects of compound semiconductors. Invited and contributed papers presented at this, the premier world forum in the field, reflect both the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors, such as InP, GaN, GaSb, In,Sb ZnSe and SiC. Ranging over the full breadth of the subject, from growth, through processing, to device