Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 September, 1995 Proceedings of the Twenty-Second International Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August to 2 September 1995
Auteur : Woo
Date de parution : 10-2019
15.6x23.4 cm
Thèmes de Compound Semiconductors 1995, Proceedings of the... :
Mots-clés :
Resonant Tunneling Diodes; Quantum Confined Stark Effect; Secondary Ion Mass Spectrometry; PL Spectrum; MOCVD; HBT; GaAs Substrates; Laser Diode; Semi-insulating GaAs Substrates; InP Substrate; Field Effect Transistors; QW; GaAs Buffer Layer; Threshold Current Density; SEM; Misfit Dislocations; Lo Mode; DCXD; Field Effect Transistor; MOVPE; Quantum Wire; HEMT; GaN Film; DX Center; Buffer Layer