Circuit Design Techniques for Non-Crystalline Semiconductors
Auteur : Sambandan Sanjiv
Despite significant progress in materials and fabrication technologies related to non-crystalline semiconductors, fundamental drawbacks continue to limit real-world application of these devices in electronic circuits. To help readers deal with problems such as low mobility and intrinsic time variant behavior, Circuit Design Techniques for Non-Crystalline Semiconductors outlines a systematic design approach, including circuit theory, enabling users to synthesize circuits without worrying about the details of device physics.
This book:
- Offers examples of how self-assembly can be used as a powerful tool in circuit synthesis
- Covers theory, materials, techniques, and applications
- Provides starting threads for new research
This area of research is particularly unique since it employs a range of disciplines including materials science, chemistry, mechanical engineering and electrical engineering. Recent progress in complementary polymer semiconductors and fabrication techniques such as ink-jet printing has opened doors to new themes and ideas. The book focuses on the central problem of threshold voltage shift and concepts related to navigating this issue when using non-crystalline semiconductors in electronic circuit design. Designed to give the non-electrical engineer a clear, simplified overview of fundamentals and tools to facilitate practical application, this book highlights design roadblocks and provides models and possible solutions for achieving successful circuit synthesis.
FUNDAMENTALS. Thin film technology – materials and fabrication. Basics of device physics and circuits. DEVICE PHYSICS. Modeling of disordered semiconductor thin film transistors. Prominent issues hindering circuit design. CIRCUIT DESIGN. Self assembly of functionality – using the disorder. Self assembly of structure. Fighting the disorder. APPLICATIONS. THREADS FOR FUTURE RESEARCH.
Sanjiv Sambandan is an assistant professor at the Flexible Electronics Lab, Department of Instrumentation and Applied Physics, Indian Institute of Science. Prior to this, he worked on large-area electronic systems on mechanically flexible substrates at Xerox Palo Alto Research Center.
Date de parution : 04-2017
15.6x23.4 cm
Date de parution : 11-2012
Ouvrage de 240 p.
15.6x23.4 cm
Thèmes de Circuit Design Techniques for Non-Crystalline Semiconductors :
Mots-clés :
Threshold Voltage Shift; Non-Crystalline Semiconductors; Thin film technology; Threshold Voltage; Device physics; Common Source Amplifier; Film transistors; IEEE Electron Device Letter; Circuit design; TFT; Functionality; Power Consumption; Self assembly; Field Effect Transistor; Semiconductor Insulator Interface; Gate Source Voltage; Data Voltage; Amorphous Silicon TFTs; Gate Bias; Fermi Level; Large Area Electronic; Current Mirror; Potential Drop; Voltage; Voltage Amplifiers; Output Impedance; Output Node; Charge Trapping; Complementary Devices; Gate Voltage; MOS Capacitor