Nano-semiconductors: devices and technology

With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies. Taking into account the semiconductor industry's transition from standard CMOS silicon to novel device structures—including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials—this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution from micro- to nanoelectronics. The book is divided into three parts that address: Semiconductor materials (i.e., carbon nanotubes, memristors, and spin organic devices). Silicon devices and technology (i.e., BiCMOS, SOI, various 3D integration and RAM technologies, and solar cells). Compound semiconductor devices and technology. This reference explores the groundbreaking opportunities in emerging materials that will take system performance beyond the capabilities of traditional CMOS-based microelectronics. Contributors cover topics ranging from electrical propagation on CNT to GaN HEMTs technology and applications. Approaching the trillion-dollar nanotech industry from the perspective of real market needs and the repercussions of technological barriers, this resource provides vital information about elemental device architecture alternatives that will lead to massive strides in future development.

Section I: Semiconductor Materials. Electrical Propagation on Carbon Nanotubes: From Electrodynamics to Circuit Models, A. Maffucci, A.G. Chiariello, C. Forestiere, and G. Miano. Monolithic Integration of Carbon Nanotubes and CMOS, H. Xie. Facile, Scalable, and Ambient-Electrochemical Route for Titania Memristor Fabrication, S. Chaudhary and N.M. Neihart. Spin Transport in Organic Semiconductors: A Brief Overview of the First Eight Years, K.M. Alam and S. Pramanik. Section II: Silicon Devices and Technology. SiGe BiCMOS Technology and Devices, M. Racanelli and E. Preisler. Ultimate FDSOI Multigate MOSFETs and Multibarrier Boosted Gate Resonant Tunneling FETs for a New High-Performance Low-Power Paradigm, A. Afzalian. Development of 3D Chip Integration Technology, K. Sakuma. Embedded Spin-Transfer-Torque MRAM, K. Lee. Nonvolatile Memory Device: Resistive Random Access Memory, P. Zhou, L. Chen, H. Lv, H. Wan, and Q. Sun. DRAM Technology, M.J. Lee. Monocrystalline Silicon Solar Cell Optimization and Modeling, J. Huang and V. Moroz. Radiation Effects on Silicon Devices, M. Bagatin, S. Gerardin, and A. Paccagnella. Section III: Compound Semiconductor Devices and Technology. GaN/InGaN Double Heterojunction Bipolar Transistors Using Direct-Growth Technology, S.-C. Shen, J.-H. Ryou, and R.D. Dupuis. GaN HEMTs Technology and Applications, G.I. Ng and S. Arulkumaran. Surface Treatment, Fabrication, and Performances of GaN-Based Metal-Oxide-Semiconductor High-Electron Mobility Transistors, C.-T. Lee. GaN-Based HEMTs on Large Diameter Si Substrate for Next Generation of High Power/High Temperature Devices, F. Medjdoub. GaAs HBT and Power Amplifier Design for Handset Terminals, K. Yamamoto. Resonant Tunneling and Negative Differential Resistance in III-Nitrides, V. Litvinov. New Frontiers in Intersubband Optoelectronics Using III- Nitride Semiconductors, P.K. Kandaswamy and E. Monroy.